1/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.b -100ma / -50v digital transistors (with built-in resistors) dta124tm / dta124te / dta124tua / dta124tka ? applications inverter, interface, driver ? features 1) built-in circuit enables the configurati on of an inverter circuit without connec ting external input resistors. (see equivalent circuit). 2) the bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. they also have the advantage of almost completely eliminating parasitic effects. 3) only the on / off conditions need to be set for operation, making the device design easy. ? structure pnp epitaxial planar silicon transistor (resistor built-in type) ? dimensions (unit : mm) abbreviated symbol : 95 abbreviated symbol : 95 abbreviated symbol : 95 abbreviated symbol : 95 rohm : smt3 eiaj : sc-59 dta124tka (2) base (3) collector (1) emitter (3) collector (1) emitter (2) base rohm : umt3 eiaj : sc-70 dta124tua each lead has same dimensions each lead has same dimensions rohm : emt3 dta124te (3) collector (1) emitter (2) base rohm : vmt3 dta124tm (1) base (2) emitter (3) collector (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.2 ( 2 ) ( 1 ) 1.6 0.7 0.15 0.1min. 0.55 0.2 1.6 1.0 0.3 0.8 ( 2 ) 0.5 0.5 ( 3 ) 0.2 ( 1 ) 0.2 0.15 0.1min. 0.9 0.7 1.25 2.1 0.3 ( 3 ) 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 ? inner circuit r 1 b : base c : collector e : emitter r 1 =22k b e c
2/2 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.06 - rev.b data sheet dta124tm / dta124te / dta124tua / dta124tka ? packaging specifications dta124te dta124tm part no. dta124tua dta124tka tl ? ? umt3 emt3 smt3 ? 3000 t106 3000 ? ? ? t146 3000 ? ? ? taping taping taping package package type t2l ? vmt3 ? 8000 ? taping code basic ordering unit (pieces) ? absolute maximum ratings (ta=25 ? c) limits parameter symbol v cbo ? 50 ? 50 ? 5 ? 100 150 200 150 ? 55 to + 150 dta124tm dta124te dta124tua dta124tka v v ceo v ebo v v ma mw c c i c p c tj tstg unit collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? electrical characteristics (ta=25 ? c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) r 1 f t min. ? 50 ? 50 ? 5 ? ? 100 ? 15.4 ? ? ? ? ? ? 250 ? 22 250 ? ? ? ? 0.5 ? 0.5 600 ? 0.3 28.6 ? ? vi c =? 50 a i c =? 1ma i e =? 50 a v cb =? 50v v eb =? 4v v ce =? 5v, i c = ? 1ma i c /i b =? 5ma/ ? 0.5ma v ce =? 10v, i e = 5ma, f = 100mhz ? v v a a ? v k mhz typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage input resistance transition frequency ? characteristics of built-in transistor ? electrical characteristic curves dc current gain : h fe collector urrent : i c (a) 1k 500 200 100 50 20 10 5 2 1 v ce = ? 5v -100 -200 -500 -1m -2m -5m -10m -20m -50m -100m ? 40 c 25 c ta=100 c fig.1 dc current gain vs. collector current - 10 - 20 - 50 -100 -200 -500 -1m -2m -5m - 10m collector saturation voltage : v ce(sat) (v) collector current : i c (a) -1 - 500m - 200m - 100m - 50m - 20m - 10m -5m -2m -1m i c /i b =10 ? 40 c 25 c ta=100 c fig.2 collector-emitter saturation voltage vs. collector current
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